BGA824N6
Silicon Germanium Low Noise Amplifier
for Global Navigation Satellite Systems (GNSS)
Data Sheet
Revision 3.0, 2013-06-24
RF & Protection Devices
Edition 2013-06-24
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA824N6
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 3.0, 2013-06-24
all
“Preliminary” status removed
9
Thermal Resistance RthJS specified
13
Drawing of application board updated
Revision 2.0, 2013-02-04
all
Preliminary Data Sheet
14, 15
Package drawings and information completed
7, 8, 10, 11
Electrical Characteristics adjusted
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™
of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 3.0, 2013-06-24
BGA824N6
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Data Sheet
4
Revision 3.0, 2013-06-24
BGA824N6
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Data Sheet
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Schematic BGA824N6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Application Board Cross-Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
TSNP-6-2 Package Outline (top, side and bottom views) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Footprint Recommendation TSNP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 15
5
Revision 3.0, 2013-06-24
BGA824N6
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Data Sheet
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision 3.0, 2013-06-24
Silicon Germanium Low Noise Amplifier
for Global Navigation Satellite Systems (GNSS)
BGA824N6
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High insertion power gain: 17.0 dB
Out-of-band input 3rd order intercept point: +7 dBm
Input 1 dB compression point: -6 dBm
Low noise figure: 0.55 dB
Low current consumption: 3.8 mA
Operating frequencies: 1550 - 1615 MHz
Supply voltage: 1.5 V to 3.3 V
Digital on/off switch (1V logic high level)
Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
B7HF Silicon Germanium technology
RF output internally matched to 50 Ω
Only 1 external SMD component necessary
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
Application
•
Ideal for all Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou, Galileo and others.
VCC PON
AI
AO
ESD
GND
BGA 824N6_Blockdiagram .vsd
Figure 1
Block Diagram
Product Name
Marking
Package
BGA824N6
F
TSNP-6-2
Data Sheet
7
Revision 3.0, 2013-06-24
BGA824N6
Features
Description
The BGA824N6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz
to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 17.0 dB gain and 0.55 dB noise
figure at a current consumption of 3.8 mA in the application configuration described in Chapter 3. The BGA824N6
is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply
voltage.
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Name
Function
1
GND
Ground
2
VCC
DC supply
3
AO
LNA output
4
GND
Ground
5
AI
LNA input
6
PON
Power on control
Data Sheet
8
Revision 3.0, 2013-06-24
BGA824N6
Maximum Ratings
1
Maximum Ratings
Table 2
Maximum Ratings
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Voltage at pin VCC
VCC
-0.3
–
3.6
V
1)
Voltage at pin AI
VAI
-0.3
–
0.9
V
–
Voltage at pin AO
VAO
-0.3
–
VCC + 0.3
V
–
Voltage at pin PON
VPON
-0.3
–
VCC + 0.3
V
–
Voltage at pin GNDRF
VGNDRF
-0.3
–
0.3
V
–
Current into pin VCC
ICC
–
–
16
mA
–
RF input power
PIN
–
–
0
dBm
–
Total power dissipation,
Ptot
–
–
60
mW
–
Junction temperature
TJ
–
–
150
°C
–
Ambient temperature range
TA
-40
–
85
°C
–
Storage temperature range
TSTG
-65
–
150
°C
–
ESD capability all pins
VESD_HBM –
–
2000
V
according to
JESD22A-114
TS < 148 °C2)
1) All voltages refer to GND-Node unless otherwise noted
2) TS is measured on the ground lead at the soldering point
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Thermal Resistance
Table 3
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point
RthJS
25
1) For calculation of RthJA please refer to Application Note Thermal Resistance
K/W
1)
Data Sheet
9
Revision 3.0, 2013-06-24
BGA824N6
Electrical Characteristics
2
Electrical Characteristics
Table 4
Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.3
V
–
Supply current
ICC
–
3.8
4.8
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
5
10
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
–
17.0
–
dB
–
NF
–
0.55
–
dB
ZS = 50 Ω
Input return loss
RLin
–
14
–
dB
–
Output return loss
RLout
–
17
–
dB
–
1/|S12|
–
23
–
dB
–
tS
–
5
–
μs
OFF- to ON-mode
–
5
–
μs
ON- to OFF-mode
Inband input 1dB-compression IP1dB
point
–
-9
–
dBm
–
Inband input 3rd-order intercept IIP3
point4)
–
+2
–
dBm
f1 = 1575 MHz
f2 = f1 +/-1 MHz
Out-of-band input 3rd-order
intercept point5)
IIP3oob
–
+7
–
dBm
f1 = 1712.7 MHz
f2 = 1850 MHz
Stability
k
–
> 1.2
–
Vpon
Power On voltage
Ipon
Power On current
2
Insertion power gain
Noise figure
2)
2
Reverse isolation
3)
Power gain settling time
1)
2)
3)
4)
5)
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
Input power = -30 dBm for each tone
Input power = -20 dBm for each tone
Data Sheet
10
Revision 3.0, 2013-06-24
BGA824N6
Electrical Characteristics
Table 5
Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
Supply voltage
VCC
1.5
–
3.3
V
–
Supply current
ICC
–
3.9
4.9
mA
ON-mode
–
0.2
3
μA
OFF-mode
1.0
–
Vcc
V
ON-mode
0
–
0.4
V
OFF-mode
–
10
15
μA
ON-mode
–
–
1
μA
OFF-mode
|S21|
–
17.1
–
dB
–
NF
–
0.55
–
dB
ZS = 50 Ω
Input return loss
RLin
–
15
–
dB
–
Output return loss
RLout
–
18
–
dB
–
Reverse isolation
1/|S12|2
–
23
–
dB
–
tS
–
5
–
μs
OFF- to ON-mode
–
5
–
μs
ON- to OFF-mode
Inband input 1dB-compression IP1dB
point
–
-6
–
dBm
–
Inband input 3rd-order intercept IIP3
point4)
–
+3
–
dBm
f1 = 1575 MHz
f2 = f1 +/-1 MHz
Out-of-band input 3rd-order
intercept point5)
IIP3oob
–
+7
–
dBm
f1 = 1712.7 MHz
f2 = 1850 MHz
Stability
k
–
> 1.2
–
Vpon
Power On voltage
Ipon
Power On current
2
Insertion power gain
Noise figure
2)
3)
Power gain settling time
1)
2)
3)
4)
5)
f = 20 MHz ... 10 GHz
Based on the application described in chapter 3
PCB losses are subtracted
To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
Input power = -30 dBm for each tone
Input power = -20 dBm for each tone
Data Sheet
11
Revision 3.0, 2013-06-24
BGA824N6
Application Information
3
Application Information
Application Board Configuration
N1
BGA824N6
GNDRF, 4
C1
(optional)
AO, 3
RFout
L1
RFin
VCC
VCC, 2
AI, 5
C2
(optional)
PON
PON, 6
GND, 1
BGA824 N6_Schematic.vsd
Figure 2
Application Schematic BGA824N6
Table 6
Bill of Materials
Name
Value
Package
Manufacturer
Function
C1 (optional)
1nF
0402
Various
DC block 1)
C2 (optional)
> 10nF2)
0402
Various
RF bypass 3)
L1
6.8nH
0402
Murata LQW type
Input matching
N1
BGA824N6
TSNP-6-2
Infineon
SiGe LNA
1) DC block might be realized with pre-filter in GNSS applications
2) For data sheet characteristics 1μF used
3) RF bypass recommended to mitigate power supply noise
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Data Sheet
12
Revision 3.0, 2013-06-24
BGA824N6
Application Information
BGAx24N6_Application _Board .vsd
Figure 3
Drawing of Application Board
Vias
Vias
Ro4003, 0.2mm
Copper
35µm
FR4,0.8mm
BGA824 N6_application _board _sideview.vsd
Figure 4
Data Sheet
Application Board Cross-Section
13
Revision 3.0, 2013-06-24
BGA824N6
Package Information
Package Information
Bottom view
+0.025
0.375 -0.015
0.7 ±0.05
0.02 MAX.
0.2
±0.05 1)
0.8 ±0.05
3
4
2
5
1
6
0.4 ±0.05
Pin 1 marking
1) Dimension applies to plated terminals
Figure 5
1.1 ±0.05
Top view
0.2 ±0.05 1)
4
TSNP-6-2-PO V01
TSNP-6-2 Package Outline (top, side and bottom views)
NSMD
0.4
0.4
0.25
0.25
0.4
0.4
0.25
0.25
(stencil thickness 100 µm)
Copper
Stencil apertures
Solder mask
TSNP-6-2-FP V01
Figure 6
Footprint Recommendation TSNP-6-2
1
Type code
Monthly data code
Pin 1 marking
TSNP-6-2-MK V01
Figure 7
Data Sheet
Marking Layout (top view)
14
Revision 3.0, 2013-06-24
BGA824N6
Package Information
1.25
Pin 1
marking
8
0.5
2
0.85
TSNP-6-2-TP V01
Figure 8
Data Sheet
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000)
15
Revision 3.0, 2013-06-24
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG